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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3638
DESCRIPTION With TO-3PN package High voltage ,high speed High reliability APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER

CHA IN
Collector current
Collector-base voltage
Collector-emitter voltage
E SEM NG
Open emitter Open base Open collector
CONDITIONS
OND IC
TOR UC
VALUE 900 500 7 15 25 UNIT V V V A A W ae ae
Emitter-base voltage
Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae
100 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA ; IB=0 IC=7A ;IB=1.4A IC=7A ;IB=1.4A VCB=500V; IE=0 VCE=900V; RBE=0 VEB=5V; IC=0 IC=1.4A ; VCE=5V 8 MIN 500
2SC3638
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICES IEBO hFE
TYP.
MAX
UNIT V
2.0 1.5 10 0.5 1.0 |I
V V A mA mA
Switching times ts tf
Fall time
Storage time

INC
E SEM ANG H
VCC=200V;IC=7A; IB1=1.4A; IB2=-2.8A
OND IC
TOR UC
3.0 |I |I 0.1 0.2
s s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3638

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3638

CHA IN
E SEM NG
OND IC
TOR UC
4


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